IRL40S212ARMA1
detaildesc

IRL40S212ARMA1

Infineon Technologies

Product No:

IRL40S212ARMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Datasheet:

-

Description:

MOSFET N-CH 40V 195A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 11553

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.369463

    $1.369463

  • 10

    $1.232516

    $12.32516

  • 50

    $1.09557

    $54.7785

  • 100

    $0.958624

    $95.8624

  • 500

    $0.931235

    $465.6175

  • 1000

    $0.912975

    $912.975

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 150µA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 231W (Tc)
Series HEXFET®, StrongIRFET™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IRL40S212