ISC010N06NM5ATMA1
detaildesc

ISC010N06NM5ATMA1

Infineon Technologies

Product No:

ISC010N06NM5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSON-8-3

Datasheet:

-

Description:

OPTIMOS5 60 V POWER MOSFET IN SU

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 2608

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.56

    $7.56

  • 10

    $6.804

    $68.04

  • 50

    $6.048

    $302.4

  • 100

    $5.292

    $529.2

  • 500

    $5.1408

    $2570.4

  • 1000

    $5.04

    $5040

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.05mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.3V @ 147µA
Supplier Device Package PG-TSON-8-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3W (Ta), 214W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 330A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)