ISC019N04NM5ATMA1
detaildesc

ISC019N04NM5ATMA1

Infineon Technologies

Product No:

ISC019N04NM5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8 FL

Datasheet:

-

Description:

40V 1.9M OPTIMOS MOSFET SUPERSO8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 7212

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.700875

    $0.700875

  • 10

    $0.630788

    $6.30788

  • 50

    $0.5607

    $28.035

  • 100

    $0.490613

    $49.0613

  • 500

    $0.476595

    $238.2975

  • 1000

    $0.46725

    $467.25

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.4V @ 50µA
Supplier Device Package PG-TDSON-8 FL
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3W (Ta), 100W (Tc)
Series OptiMOS™-5
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 170A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Package Tape & Reel (TR)
Base Product Number ISC019N