Infineon Technologies
Product No:
ISP25DP06LMSATMA1
Manufacturer:
Package:
PG-SOT223
Datasheet:
-
Description:
MOSFET P-CH 60V 1.9A SOT223
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.231336
$0.231336
10
$0.202419
$2.02419
50
$0.173502
$8.6751
100
$0.159044
$15.9044
500
$0.151814
$75.907
1000
$0.144585
$144.585
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 30 V |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13.9 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 250mOhm @ 1.9A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 270µA |
Supplier Device Package | PG-SOT223 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 1.8W (Ta), 5W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-261-4, TO-261AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | ISP25DP06 |