ISS55EP06LMXTSA1

Infineon Technologies

Product No:

ISS55EP06LMXTSA1

Manufacturer:

Package:

PG-SOT23-3-5

Datasheet:

Description:

MOSFET P-CH 60V 180MA SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 45479

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	18 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.59 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5Ohm @ 180mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 11µA
Supplier Device Package	PG-SOT23-3-5
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	400mW (Ta)
Series	OptiMOS™
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISS55EP06