IXFN70N120SK
detaildesc

IXFN70N120SK

IXYS

Product No:

IXFN70N120SK

Manufacturer:

IXYS

Package:

SOT-227B

Datasheet:

pdf

Description:

SICFET N-CH 1200V 68A SOT227B

Quantity:

Delivery:

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Payment:

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In Stock : 6

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $167.316975

    $167.316975

  • 10

    $150.585277

    $1505.85277

  • 50

    $133.85358

    $6692.679

  • 100

    $117.121882

    $11712.1882

  • 500

    $113.775543

    $56887.7715

  • 1000

    $111.54465

    $111544.65

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 15mA
Supplier Device Package SOT-227B
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) -
Series -
Package / Case SOT-227-4, miniBLOC
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Mfr IXYS
Vgs (Max) +20V, -5V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number IXFN70