IXTA1N100
detaildesc

IXTA1N100

IXYS

Product No:

IXTA1N100

Manufacturer:

IXYS

Package:

TO-263AA

Datasheet:

pdf

Description:

MOSFET N-CH 1000V 1.5A TO263

Quantity:

Delivery:

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Payment:

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In Stock : 34

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.176428

    $4.176428

  • 10

    $3.758785

    $37.58785

  • 50

    $3.341142

    $167.0571

  • 100

    $2.923499

    $292.3499

  • 500

    $2.839971

    $1419.9855

  • 1000

    $2.784285

    $2784.285

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11Ohm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 25µA
Supplier Device Package TO-263AA
Drain to Source Voltage (Vdss) 1000 V
Power Dissipation (Max) 54W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Mfr IXYS
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTA1