IXTH3N200P3HV
detaildesc

IXTH3N200P3HV

IXYS

Product No:

IXTH3N200P3HV

Manufacturer:

IXYS

Package:

TO-247 (IXTH)

Datasheet:

pdf

Description:

MOSFET N-CH 2000V 3A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 93

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $31.863195

    $31.863195

  • 10

    $28.676876

    $286.76876

  • 50

    $25.490556

    $1274.5278

  • 100

    $22.304236

    $2230.4236

  • 500

    $21.666973

    $10833.4865

  • 1000

    $21.24213

    $21242.13

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 8Ohm @ 1.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247 (IXTH)
Drain to Source Voltage (Vdss) 2000 V
Power Dissipation (Max) 520W (Tc)
Series Polar P3™
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Mfr IXYS
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTH3