MSC180SMA120S

Microchip Technology

Product No:

MSC180SMA120S

Manufacturer:

Package:

TO-268

Datasheet:

Description:

MOSFET SIC 1200 V 180 MOHM TO-26

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 1000 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 20 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	225mOhm @ 8A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	3.26V @ 500µA
Supplier Device Package	TO-268
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Microchip Technology
Vgs (Max)	+23V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	MSC180