MSCSM120HRM08NG
detaildesc

MSCSM120HRM08NG

Microchip Technology

Product No:

MSCSM120HRM08NG

Manufacturer:

Microchip Technology

Package:

-

Datasheet:

pdf

Description:

PM-MOSFET-SIC-SP6C

Quantity:

Delivery:

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Payment:

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In Stock : 5

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1128.25125

    $1128.25125

  • 10

    $1015.426125

    $10154.26125

  • 50

    $902.601

    $45130.05

  • 100

    $789.775875

    $78977.5875

  • 500

    $767.21085

    $383605.425

  • 1000

    $752.1675

    $752167.5

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature Silicon Carbide (SiC)
Configuration 4 N-Channel (Three Level Inverter)
Input Capacitance (Ciss) (Max) @ Vds 12100pF @ 1000V, 9000pF @ 700V
Gate Charge (Qg) (Max) @ Vgs 928nC @ 20V, 430nC @ 20V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 12mA, 2.4V @ 8mA
Supplier Device Package -
Drain to Source Voltage (Vdss) 1200V (1.2kV), 700V
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 1.253kW (Tc), 613W (Tc)
Current - Continuous Drain (Id) @ 25°C 317A (Tc), 227A (Tc)
Mfr Microchip Technology
Package Bulk