MSCSM170HRM451AG
detaildesc

MSCSM170HRM451AG

Microchip Technology

Product No:

MSCSM170HRM451AG

Manufacturer:

Microchip Technology

Package:

-

Datasheet:

pdf

Description:

PM-MOSFET-SIC-SP1F

Quantity:

Delivery:

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In Stock : 6

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $205.38

    $205.38

  • 10

    $184.842

    $1848.42

  • 50

    $164.304

    $8215.2

  • 100

    $143.766

    $14376.6

  • 500

    $139.6584

    $69829.2

  • 1000

    $136.92

    $136920

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature Silicon Carbide (SiC)
Configuration 4 N-Channel (Three Level Inverter)
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 1000V, 3020pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 178nC @ 20V, 232nC @ 20V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3.2V @ 2.5mA, 2.8V @ 3mA
Supplier Device Package -
Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 319W (Tc), 395W (Tc)
Current - Continuous Drain (Id) @ 25°C 64A (Tc), 89A (Tc)
Mfr Microchip Technology
Package Bulk