NTC040N120SC1
detaildesc

NTC040N120SC1

onsemi

Product No:

NTC040N120SC1

Manufacturer:

onsemi

Package:

Die

Datasheet:

pdf

Description:

SIC MOS WAFER SALES 40MOHM 1200V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 440

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $19.018755

    $19.018755

  • 10

    $17.116879

    $171.16879

  • 50

    $15.215004

    $760.7502

  • 100

    $13.313128

    $1331.3128

  • 500

    $12.932753

    $6466.3765

  • 1000

    $12.67917

    $12679.17

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 10mA
Supplier Device Package Die
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 348W (Tc)
Series -
Package / Case Die
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tray