NTH4L020N120SC1
detaildesc

NTH4L020N120SC1

onsemi

Product No:

NTH4L020N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SICFET N-CH 1200V 102A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 215

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $37.725187

    $37.725187

  • 10

    $33.952669

    $339.52669

  • 50

    $30.18015

    $1509.0075

  • 100

    $26.407631

    $2640.7631

  • 500

    $25.653128

    $12826.564

  • 1000

    $25.150125

    $25150.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2943 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 20mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 510W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number NTH4L020