NTH4L028N170M1
detaildesc

NTH4L028N170M1

onsemi

Product No:

NTH4L028N170M1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SIC MOSFET 1700 V 28 MOHM M1 SER

Quantity:

Delivery:

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Payment:

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In Stock : 14

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $43.298325

    $43.298325

  • 10

    $38.968493

    $389.68493

  • 50

    $34.63866

    $1731.933

  • 100

    $30.308828

    $3030.8828

  • 500

    $29.442861

    $14721.4305

  • 1000

    $28.86555

    $28865.55

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 40mOhm @ 60A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 20mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1700 V
Power Dissipation (Max) 535W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 81A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number NTH4L02