NTH4L060N065SC1

onsemi

Product No:

NTH4L060N065SC1

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Package:

TO-247-4L

Datasheet:

Description:

SIC MOS TO247-4L 650V

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In Stock : 349

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1473 pF @ 325 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	70mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 6.5mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	176W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Mfr	onsemi
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube