NTH4L075N065SC1
detaildesc

NTH4L075N065SC1

onsemi

Product No:

NTH4L075N065SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SILICON CARBIDE (SIC) MOSFET - 5

Quantity:

Delivery:

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Payment:

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In Stock : 354

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.867598

    $7.867598

  • 10

    $7.080838

    $70.80838

  • 50

    $6.294078

    $314.7039

  • 100

    $5.507318

    $550.7318

  • 500

    $5.349966

    $2674.983

  • 1000

    $5.245065

    $5245.065

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1196 pF @ 325 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 85mOhm @ 15A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 148W (Tc)
Series -
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube
Base Product Number NTH4L075