NTHL022N120M3S
onsemi
Product No:
NTHL022N120M3S
Manufacturer:
Package:
TO-247-3
Datasheet:
Description:
SILICON CARBIDE (SIC) MOSFET ELI
Quantity:
Delivery:
Payment:
In Stock : 111
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$20.173545
$20.173545
10
$18.156191
$181.56191
50
$16.138836
$806.9418
100
$14.121481
$1412.1481
500
$13.718011
$6859.0055
1000
$13.44903
$13449.03
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 800 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 18 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 18V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.4V @ 20mA |
| Supplier Device Package | TO-247-3 |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 352W (Tc) |
| Series | - |
| Package / Case | TO-247-3 |
| Technology | SiCFET (Silicon Carbide) |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Mfr | onsemi |
| Vgs (Max) | +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Package | Tube |
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