NTMTSC4D2N10GTXG
detaildesc

NTMTSC4D2N10GTXG

onsemi

Product No:

NTMTSC4D2N10GTXG

Manufacturer:

onsemi

Package:

8-TDFNW (8.3x8.4)

Datasheet:

pdf

Description:

100V MVSOA IN DFNW8(PQFN8X8) PAC

Quantity:

Delivery:

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Payment:

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In Stock : 1707

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.654125

    $4.654125

  • 10

    $4.188713

    $41.88713

  • 50

    $3.7233

    $186.165

  • 100

    $3.257887

    $325.7887

  • 500

    $3.164805

    $1582.4025

  • 1000

    $3.10275

    $3102.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10450 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 159 nC @ 10 V
Mounting Type Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs 4.2mOhm @ 88A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 450µA
Supplier Device Package 8-TDFNW (8.3x8.4)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.9W (Ta), 267W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 178A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)