NVH4L020N090SC1
detaildesc

NVH4L020N090SC1

onsemi

Product No:

NVH4L020N090SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SIC MOSFET 900V TO247-4L

Quantity:

Delivery:

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Payment:

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In Stock : 240

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $40.71375

    $40.71375

  • 10

    $36.642375

    $366.42375

  • 50

    $32.571

    $1628.55

  • 100

    $28.499625

    $2849.9625

  • 500

    $27.68535

    $13842.675

  • 1000

    $27.1425

    $27142.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 16mOhm @ 60A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 20mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 900 V
Power Dissipation (Max) 484W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 116A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube