NVH4L022N120M3S
detaildesc

NVH4L022N120M3S

onsemi

Product No:

NVH4L022N120M3S

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SIC MOS TO247-4L 22MOHM 1200V

Quantity:

Delivery:

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Payment:

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In Stock : 647

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $45.35055

    $45.35055

  • 10

    $40.815495

    $408.15495

  • 50

    $36.28044

    $1814.022

  • 100

    $31.745385

    $3174.5385

  • 500

    $30.838374

    $15419.187

  • 1000

    $30.2337

    $30233.7

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 20mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 352W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Mfr onsemi
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube