NVH4L040N120M3S
detaildesc

NVH4L040N120M3S

onsemi

Product No:

NVH4L040N120M3S

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

-

Description:

SIC MOS TO247-4L 40MOHM 1200V M3

Quantity:

Delivery:

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Payment:

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In Stock : 140

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $22.275225

    $22.275225

  • 10

    $20.047702

    $200.47702

  • 50

    $17.82018

    $891.009

  • 100

    $15.592657

    $1559.2657

  • 500

    $15.147153

    $7573.5765

  • 1000

    $14.85015

    $14850.15

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 54mOhm @ 20A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.4V @ 10mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 231W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Mfr onsemi
Vgs (Max) +18V, -3V
Drive Voltage (Max Rds On, Min Rds On) 18V
Package Tube