NVH4L045N065SC1
detaildesc

NVH4L045N065SC1

onsemi

Product No:

NVH4L045N065SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SIC MOS TO247-4L 650V

Quantity:

Delivery:

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Payment:

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In Stock : 366

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $16.538445

    $16.538445

  • 10

    $14.8846

    $148.846

  • 50

    $13.230756

    $661.5378

  • 100

    $11.576911

    $1157.6911

  • 500

    $11.246143

    $5623.0715

  • 1000

    $11.02563

    $11025.63

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 8mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 187W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Mfr onsemi
Vgs (Max) +22V, -8V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tube