NVH4L080N120SC1
detaildesc

NVH4L080N120SC1

onsemi

Product No:

NVH4L080N120SC1

Manufacturer:

onsemi

Package:

TO-247-4L

Datasheet:

pdf

Description:

SICFET N-CH 1200V 29A TO247-4

Quantity:

Delivery:

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Payment:

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In Stock : 192

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $14.5026

    $14.5026

  • 10

    $13.05234

    $130.5234

  • 50

    $11.60208

    $580.104

  • 100

    $10.15182

    $1015.182

  • 500

    $9.861768

    $4930.884

  • 1000

    $9.6684

    $9668.4

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Supplier Device Package TO-247-4L
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 170W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number NVH4L080