NXV90EPR
detaildesc

NXV90EPR

Nexperia USA Inc.

Product No:

NXV90EPR

Manufacturer:

Nexperia USA Inc.

Package:

TO-236AB

Datasheet:

pdf

Description:

NXV90EP/SOT23/TO-236AB

Quantity:

Delivery:

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Payment:

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In Stock : 30333

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.109368

    $0.109368

  • 10

    $0.095697

    $0.95697

  • 50

    $0.082026

    $4.1013

  • 100

    $0.075191

    $7.5191

  • 500

    $0.071773

    $35.8865

  • 1000

    $0.068355

    $68.355

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 252 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 1.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-236AB
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 340mW (Ta), 2.1W (Tc)
Series TrenchMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Mfr Nexperia USA Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)