PJD50N10AL-AU_L2_000A1

Panjit International Inc.

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Package:

TO-252

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Description:

100V N-CHANNEL ENHANCEMENT MODE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1485 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2W (Ta), 83W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.3A (Ta), 42A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJD50