PJQ1916_R1_00201

Panjit International Inc.

Product No:

PJQ1916_R1_00201

Manufacturer:

Package:

DFN1006-3

Datasheet:

Description:

20V N-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	46 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	300mOhm @ 500mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	DFN1006-3
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	-
Package / Case	3-UFDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	950mA (Ta)
Mfr	Panjit International Inc.
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	PJQ1916