PJQ5540V-AU_R2_002A1

Panjit International Inc.

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DFN5060X-8L

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40V N-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4690 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.1mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 50µA
Supplier Device Package	DFN5060X-8L
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3.3W (Ta), 115.4W (Tc)
Series	Automotive, AEC-Q101
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	29.7A (Ta), 174A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tape & Reel (TR)