Home / FET, MOSFET Arrays / PJT7002H_R1_00001
PJT7002H_R1_00001
detaildesc

PJT7002H_R1_00001

Panjit International Inc.

Product No:

PJT7002H_R1_00001

Package:

SOT-363

Datasheet:

pdf

Description:

60V N-CHANNEL ENHANCEMENT MODE M

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1270

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.038472

    $0.038472

  • 10

    $0.033663

    $0.33663

  • 50

    $0.028854

    $1.4427

  • 100

    $0.02645

    $2.645

  • 500

    $0.025247

    $12.6235

  • 1000

    $0.024045

    $24.045

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SOT-363
Drain to Source Voltage (Vdss) 60V
Series -
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 350mW (Ta)
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Mfr Panjit International Inc.
Package Tape & Reel (TR)
Base Product Number PJT7002