PJW3P06A-AU_R2_000A1

Panjit International Inc.

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SOT-223

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Description:

60V P-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	170mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.1W (Ta)
Series	Automotive, AEC-Q101
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Mfr	Panjit International Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJW3P06A