Rohm Semiconductor
Product No:
R6009END3TL1
Manufacturer:
Package:
TO-252
Datasheet:
-
Description:
MOSFET N-CH 600V 9A TO252
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.59201
$1.59201
10
$1.432809
$14.32809
50
$1.273608
$63.6804
100
$1.114407
$111.4407
500
$1.082567
$541.2835
1000
$1.06134
$1061.34
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 535mOhm @ 2.8A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | TO-252 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 94W (Tc) |
Series | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Mfr | Rohm Semiconductor |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | R6009 |