R6511ENXC7G
detaildesc

R6511ENXC7G

Rohm Semiconductor

Product No:

R6511ENXC7G

Manufacturer:

Rohm Semiconductor

Package:

TO-220FM

Datasheet:

-

Description:

650V 11A TO-220FM, LOW-NOISE POW

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 32

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.327062

    $2.327062

  • 10

    $2.094356

    $20.94356

  • 50

    $1.86165

    $93.0825

  • 100

    $1.628944

    $162.8944

  • 500

    $1.582402

    $791.201

  • 1000

    $1.551375

    $1551.375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 400mOhm @ 3.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 320µA
Supplier Device Package TO-220FM
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 53W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number R6511