R6520ENZ4C13

Rohm Semiconductor

Product No:

R6520ENZ4C13

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Package:

TO-247G

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Description:

650V 20A TO-247, LOW-NOISE POWER

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	205mOhm @ 9.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 630µA
Supplier Device Package	TO-247G
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	231W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	R6520