R8001CND3FRATL
detaildesc

R8001CND3FRATL

Rohm Semiconductor

Product No:

R8001CND3FRATL

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Datasheet:

-

Description:

MOSFET N-CH 800V 1A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 942

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.551375

    $1.551375

  • 10

    $1.396238

    $13.96238

  • 50

    $1.2411

    $62.055

  • 100

    $1.085962

    $108.5962

  • 500

    $1.054935

    $527.4675

  • 1000

    $1.03425

    $1034.25

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.7Ohm @ 500mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5.5V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 36W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number R8001