RD3G03BATTL1
detaildesc

RD3G03BATTL1

Rohm Semiconductor

Product No:

RD3G03BATTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Datasheet:

-

Description:

PCH -40V -35A POWER MOSFET - RD3

Quantity:

Delivery:

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In Stock : 3339

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.847035

    $0.847035

  • 10

    $0.762332

    $7.62332

  • 50

    $0.677628

    $33.8814

  • 100

    $0.592924

    $59.2924

  • 500

    $0.575984

    $287.992

  • 1000

    $0.56469

    $564.69

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 19.1mOhm @ 35A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 56W (Ta)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RD3G03