RD3S100AAFRATL
detaildesc

RD3S100AAFRATL

Rohm Semiconductor

Product No:

RD3S100AAFRATL

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Datasheet:

-

Description:

MOSFET N-CH 190V 10A TO252

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1052

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.878187

    $1.878187

  • 10

    $1.690369

    $16.90369

  • 50

    $1.50255

    $75.1275

  • 100

    $1.314731

    $131.4731

  • 500

    $1.277168

    $638.584

  • 1000

    $1.252125

    $1252.125

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 190 V
Power Dissipation (Max) 85W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)
Base Product Number RD3S100