RD3S100CNTL1
detaildesc

RD3S100CNTL1

Rohm Semiconductor

Product No:

RD3S100CNTL1

Manufacturer:

Rohm Semiconductor

Package:

TO-252

Datasheet:

-

Description:

MOSFET N-CH 190V 10A TO252

Quantity:

Delivery:

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In Stock : 1844

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.427265

    $1.427265

  • 10

    $1.284539

    $12.84539

  • 50

    $1.141812

    $57.0906

  • 100

    $0.999085

    $99.9085

  • 500

    $0.97054

    $485.27

  • 1000

    $0.95151

    $951.51

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 190 V
Power Dissipation (Max) 85W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)
Base Product Number RD3S100