RJ1R10BBHTL1

Rohm Semiconductor

Product No:

RJ1R10BBHTL1

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Package:

TO-263AB

Datasheet:

Description:

NCH 150V 105A, TO-263AB, POWER M

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7750 pF @ 75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.2mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	181W (Ta)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	105A (Ta)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)