RN2412TE85LF

Toshiba Semiconductor and Storage

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RN2412TE85LF

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S-Mini

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Description:

TRANS PREBIAS PNP 50V 0.1A SMINI

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Frequency - Transition	200 MHz
Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	22 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Mounting Type	Surface Mount
Voltage - Collector Emitter Breakdown (Max)	50 V
Product Status	Active
Supplier Device Package	S-Mini
Series	-
Transistor Type	PNP - Pre-Biased
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200 mW
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Base Product Number	RN2412