RS1E200GNTB
detaildesc

RS1E200GNTB

Rohm Semiconductor

Product No:

RS1E200GNTB

Manufacturer:

Rohm Semiconductor

Package:

8-HSOP

Datasheet:

pdf

Description:

MOSFET N-CH 30V 20A 8HSOP

Quantity:

Delivery:

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In Stock : 1753

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.4536

    $0.4536

  • 10

    $0.3969

    $3.969

  • 50

    $0.3402

    $17.01

  • 100

    $0.31185

    $31.185

  • 500

    $0.297675

    $148.8375

  • 1000

    $0.2835

    $283.5

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3W (Ta), 25.1W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Mfr Rohm Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RS1E