RS6G100BGTB1

Rohm Semiconductor

Product No:

RS6G100BGTB1

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Package:

8-HSOP

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Description:

NCH 40V 100A, HSOP8, POWER MOSFE

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1510 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3W (Ta), 59W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)