RX3R10BBHC16

Rohm Semiconductor

Product No:

RX3R10BBHC16

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Package:

TO-220AB

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Description:

NCH 150V 105A, TO-220AB, POWER M

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7550 pF @ 75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.8mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	181W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	105A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tube
Base Product Number	RX3R10