SCT055HU65G3AG
detaildesc

SCT055HU65G3AG

STMicroelectronics

Product No:

SCT055HU65G3AG

Manufacturer:

STMicroelectronics

Package:

HU3PAK

Datasheet:

pdf

Description:

AUTOMOTIVE-GRADE SILICON CARBIDE

Quantity:

Delivery:

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Payment:

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In Stock : 273

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $11.221875

    $11.221875

  • 10

    $10.099687

    $100.99687

  • 50

    $8.9775

    $448.875

  • 100

    $7.855313

    $785.5313

  • 500

    $7.630875

    $3815.4375

  • 1000

    $7.48125

    $7481.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 721 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 18 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 72mOhm @ 15A, 18V
Product Status Active
Vgs(th) (Max) @ Id 4.2V @ 1mA
Supplier Device Package HU3PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 185W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr STMicroelectronics
Vgs (Max) +22V, -10V
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Package Tape & Reel (TR)
Base Product Number SCT055