SCTW60N120G2

STMicroelectronics

Product No:

SCTW60N120G2

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Package:

HiP247™

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 8 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	389W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+18V, -5V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Bulk
Base Product Number	SCTW60