SCTWA50N120
detaildesc

SCTWA50N120

STMicroelectronics

Product No:

SCTWA50N120

Manufacturer:

STMicroelectronics

Package:

HiP247™

Datasheet:

pdf

Description:

SICFET N-CH 1200V 65A HIP247

Quantity:

Delivery:

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Payment:

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In Stock : 245

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $30.121875

    $30.121875

  • 10

    $27.109687

    $271.09687

  • 50

    $24.0975

    $1204.875

  • 100

    $21.085313

    $2108.5313

  • 500

    $20.482875

    $10241.4375

  • 1000

    $20.08125

    $20081.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 200°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Supplier Device Package HiP247™
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 318W (Tc)
Series -
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Mfr STMicroelectronics
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tube
Base Product Number SCTWA50