SI2329DS-T1-GE3
Vishay Siliconix
Product No:
SI2329DS-T1-GE3
Manufacturer:
Package:
SOT-23-3 (TO-236)
Datasheet:
Description:
MOSFET P-CH 8V 6A SOT23-3
Quantity:
Delivery:
Payment:
In Stock : 3934
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.315
$0.315
10
$0.275625
$2.75625
50
$0.23625
$11.8125
100
$0.216562
$21.6562
500
$0.206719
$103.3595
1000
$0.196875
$196.875
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1485 pF @ 4 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.3A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 8 V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Series | TrenchFET® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±5V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI2329 |
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