SI2369BDS-T1-GE3

Vishay Siliconix

Product No:

SI2369BDS-T1-GE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 30V 5.6A/7.5A SOT23

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	745 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	27mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Series	TrenchFET® Gen IV
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta), 7.5A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+16V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2369