SI4186DY-T1-GE3
detaildesc

SI4186DY-T1-GE3

Vishay Siliconix

Product No:

SI4186DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Datasheet:

pdf

Description:

MOSFET N-CH 20V 35.8A 8SO

Quantity:

Delivery:

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In Stock : 6492

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.689063

    $0.689063

  • 10

    $0.620156

    $6.20156

  • 50

    $0.55125

    $27.5625

  • 100

    $0.482344

    $48.2344

  • 500

    $0.468562

    $234.281

  • 1000

    $0.459375

    $459.375

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3630 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.6mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Series TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SI4186