SI4866DY-T1-E3
Vishay Siliconix
Product No:
SI4866DY-T1-E3
Manufacturer:
Package:
8-SOIC
Datasheet:
Description:
MOSFET N-CH 12V 11A 8SO
Quantity:
Delivery:
Payment:
In Stock : 2266
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.397812
$1.397812
10
$1.258031
$12.58031
50
$1.11825
$55.9125
100
$0.978469
$97.8469
500
$0.950512
$475.256
1000
$0.931875
$931.875
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 17A, 4.5V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 12 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4866 |
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