SI8819EDB-T2-E1

Vishay Siliconix

Product No:

SI8819EDB-T2-E1

Manufacturer:

Package:

4-MICRO FOOT® (0.8x0.8)

Datasheet:

Description:

MOSFET P-CH 12V 2.9A 4MICRO FOOT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 1.5A, 3.7V
Product Status	Active
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	900mW (Ta)
Series	-
Package / Case	4-XFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 3.7V
Package	Tape & Reel (TR)
Base Product Number	SI8819