SIDR170DP-T1-RE3
detaildesc

SIDR170DP-T1-RE3

Vishay Siliconix

Product No:

SIDR170DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8DC

Datasheet:

-

Description:

MOSFET N-CH 100V 23.2A/95A PPAK

Quantity:

Delivery:

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In Stock : 7262

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.641465

    $1.641465

  • 10

    $1.477318

    $14.77318

  • 50

    $1.313172

    $65.6586

  • 100

    $1.149026

    $114.9026

  • 500

    $1.116196

    $558.098

  • 1000

    $1.09431

    $1094.31

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6195 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8DC
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIDR170